Improving Breakdown Voltage Characteristics of GDAs using Trigger Voltage

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

Improving Voltage Stability Margin Using Voltage Profile and Sensitivity Analysis by Neural Network

This paper presents a new approach for estimating and improving voltage stability margin from phase and magnitude profile of bus voltages using sensitivity analysis of Voltage Stability Assessment Neural Network (VSANN). Bus voltage profile contains useful information about system stability margin including the effect of load-generation, line outage and reactive power compensation so, it is ad...

Breakdown behaviour of high-voltage GaN-HEMTs

Investigation of Voltage Breakdown Caused by Microparticles

Degradation of RF accelerating cavities caused by field emission currently limits the design of future linear accelerators. When field emission is the problem, foreign particles often deserve the blame, but they can be ”processed” away if the cavity electric field is high enough to initiate voltage breakdown near the particle site, in which case the troublesome particle vaporizes, leaving behin...

Improving the Voltage Profile of the Power System Using PV-STATCOM

This paper presents a novel concept of utilizing the photo voltaic solar farm inverter as STATCOM(Static Compensator), named PV-STATCOM, in order to improve the voltage profile of the power system. The entire STATCOM is able to transmit either active or reactive power into the grid. This system is connected to a 14 BUS IEEE standard grid as a case study to simulate the performance of the system...